Journal-article
Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
Published In:
Applied Physics Letters
Volume: 120
Issue: 15
Publication Date: Apr 11, 2022
Authors:
Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Wesley Turner, Patrick Fay, Sai Mu, Chris G. Van de Walle, Amit Lal, Huili (Grace) Xing, Debdeep Jena
DOI: 10.1063/5.0075636