CREEM

K. Sarkar, M. Jordan, A. Kebede, S. Kriske, F. Wise, and D. Kumar

Enhanced Magnetic Cooling through Tailoring the Size-Dependent Magnetocaloric Effect of Iron Nanoparticles Embedded in Titanium Nitride Thin Films

Magnetochemistry

9

188

(2023)

10.3390/magnetochemistry9070188

Electrical and Optical Properties of TiN and TiNO Thin and Ultra-Thin Films

ACS Applied Materials and Interfaces

(2023)

J. Som, J. Choi, H. Zhang, N. Reddy Mucha, S. Fialkova, K. Mensah-Darkwa, J. Suntivich, R. K. Gupta, and D. Kumar

Effect of substrate-induced lattice strain on the electrochemical properties of pulsed laser deposited nickel oxide thin film

Materials Science and Engineering: B

280

115711

(2022)

10.1016/j.mseb.2022.115711

J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de Walle, A. Lal, H. (. Xing, and D. Jena

Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties

Applied Physics Letters

120

(2022)

10.1063/5.0075636

R. Chaudhuri, Z. Zhang, H. G. Xing, and D. Jena

Very High Density (>10¹⁴ cm⁻²) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures

Advanced Electronic Materials

8

(2022)

10.1002/aelm.202101120

T. Yu, J. Wright, G. Khalsa, B. Pamuk, C. S. Chang, Y. Matveyev, X. Wang, T. Schmitt, D. Feng, D. A. Muller, H. G. Xing, D. Jena, and V. N. Strocov

Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Science Advances

7

(2021)

10.1126/sciadv.abi5833

R. Chaudhuri, A. Hickman, J. Singhal, J. Casamento, H. G. Xing, and D. Jena

In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors

physica status solidi (a)

219

(2021)

10.1002/pssa.202100452

J. Casamento, H. Lee, C. S. Chang, M. F. Besser, T. Maeda, D. A. Muller, H. (. Xing, and D. Jena

Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures

APL Materials

9

(2021)

10.1063/5.0054522

R. Chaudhuri, Z. Chen, D. A. Muller, H. G. Xing, and D. Jena

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

Journal of Applied Physics

130

(2021)

10.1063/5.0054321

Ł. Janicki, R. Chaudhuri, S. J. Bader, H. G. Xing, D. Jena, and R. Kudrawiec

Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures

physica status solidi (RRL) – Rapid Research Letters

15

(2021)

10.1002/pssr.202000573